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Physics of Semiconductor Devices. 297,40 Add to cart. Ebook, PDF with Adobe DRM ISBN: 9783319030029 . Bijoy Krishna Das, Nandita DasGupta.

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Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: . IEEE, and Nandita DasGupta, Member, IEEE. . Semiconductor Devices, 2nd ed. New York, NY, .

Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, .

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